o2412 tkim/91003tn (kt)/91098ha (kt)/1115my/1283ki, ts no.0676-1/10 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 2SD1012 bipolar transistor 15v, 0.7a, low v ce ( sat ) , npn single spa stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 20 v collector-to-emitter voltage v ceo 15 v emitter-to-base voltage v ebo 5v collector current i c 0.7 a collector current (pulse) i cp 1.5 a collector dissipation p c 250 mw junction temperature tj 125 c storage temperature tstg --55 to +125 c package dimensions unit : mm (typ) 7524-004 ordering number : en0676f product & package information ? package : spa ? jeita, jedec : sc-72 ? minimum packing quantity : 2,500 pcs./box, 500pcs./bag marking electrical connection 123 4.0 3.8 3.0 2.2 0.7 0.7 0.6 0.4 0.4 0.4 0.5 3.0 1.8 15.0 1.3 1.3 1 : emitter 2 : collecto r 3 : base spa 2SD1012g-spa 2SD1012g-spa-ac 2SD1012f-spa 2SD1012f-spa-ac d1012 lot no. rank 2 1 3
2SD1012 no.0676-2/10 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =15v, i e =0a 1.0 a emitter cutoff current i ebo v eb =4v, i c =0a 1.0 a dc current gain h fe 1v ce =2v, i c =50ma 160* 960* h fe 2v ce =2v, i c =500ma pulse 80 gain-bandwidth product f t v ce =10v, i c =50ma 250 mhz common base output capacitance cob v cb =10v, f=1mhz 8 pf collector-to-emitter saturation voltage v ce (sat)1 i c =5ma, i b =0.5ma 10 25 mv v ce (sat)2 i c =100ma, i b =10ma 30 80 mv base-to-emitter saturation voltage v be (sat) i c =100ma, i b =10ma 0.8 1.2 v collector-to-base breakdown voltage v (br)cbo i c =10 a, i e =0a 20 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma, r be = 15 v emitter-to-base breakdown voltage v (br)ebo i e =10 a, i c =0a 5 v * : the 2SD1012 is classi ed by 50ma h fe as follows : rank f g h h fe 160 to 320 280 to 560 480 to 960 ordering information device package shipping memo 2SD1012g-spa spa 500pcs./bag pb free 2SD1012g-spa-ac spa-wa 2,500pcs./box 2SD1012f-spa spa 500pcs./bag 2SD1012f-spa-ac spa-wa 2,500pcs./box
2SD1012 no.0676-3/10 i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- ma base-to-emitter voltage, v be -- v base current, i b -- a i b -- v be f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- mhz collector-to-base voltage, v cb -- v cob -- v cb output capacitance, cob -- pf collector current, i c -- ma h fe -- i c dc current gain, h fe ambient temperature, ta -- c p c -- ta collector dissipation, p c -- mw collector current, i c -- ma v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv a s o collector current, i c -- a collector-to-emitter voltage, v ce -- v 0 20 40 60 80 100 0 0.2 0.4 0.6 0.8 1.0 itr08385 v ce =5v 800 700 600 500 400 300 200 100 0 0 0.1 0.2 0.3 0.4 0.5 i b =0ma itr08384 1ma 2ma 4ma 6ma 10ma 50ma 2 5 5 3 2 5 3 100 10 1000 2 5 3 10000 23 5 1.0 23 5 10 23 5 100 1000 itr08389 i c / i b =10 10 1.0 10 7 5 5 3 3 2 23 27 35 itr08388 f=1mhz 2 3 5 2 3 5 7 100 7 1000 10 23 5 1.0 23 5 10 100 23 5 23 5 1000 itr08387 100 10 1.0 2 7 5 3 1000 2 7 5 3 23 57 7 10 23 5 100 itr08386 v ce =10v v ce =2v 0.1 0.01 5 7 3 1.0 5 7 3 3 2 2 2 1.0 10 57 2 3 25723 3 itr08390 100ms 10ms dc operation i cp =1.5a i c =0.7a 0 320 280 240 200 160 120 80 40 0 20 40 60 100 120 140 80 itr09908
2SD1012 no.0676-4/10 i cc -- p o output power, p o -- mw f response p o -- v in output power, p o -- mw response -- db input voltage, v in -- mv frequency, f -- hz thd -- p o total harmonic distortion, thd -- % output power, p o -- mw p o -- v cc supply voltage, v cc -- v --12 --10 -- 8 -- 2 -- 4 -- 6 0 2 4 100 77 5 3 1k 25 37 25 37 25 3 10k 100k itr08393 10 5 7 3 2 100 5 3 2 100 10 57 23 57 323 itr08394 v cc =3v r l =8 0db : 44.7db / 1khz v cc =3v r l =8 f=1khz 10 5 7 3 2 100 5 3 2 1.8 2.2 1.4 3.0 3.4 3.8 2.6 itr08395 r l =8 thd=10% f=1khz 10 5 7 3 100 5 7 3 2 3 2 1.0 10 57 2 5 7 2 3 itr08391 10 1.0 5 7 3 2 100 5 7 3 2 10 100 257 3 57 323 itr08392 v cc =3v r l =8 f=1khz v cc =3v r l =8 f=1khz current dissipation, i cc -- ma output power, p o -- mw
2SD1012 no.0676-5/10 taping speci cation 2SD1012g-spa-ac, 2SD1012f-spa-ac
2SD1012 no.0676-6/10
2SD1012 no.0676-7/10 outline drawing 2SD1012g-spa-ac, 2SD1012f-spa-ac mass (g) unit 0.13 * for reference mm
2SD1012 no.0676-8/10 bag packing speci cation 2SD1012g-spa, 2SD1012f-spa
2SD1012 no.0676-9/10 outline drawing 2SD1012g-spa, 2SD1012f-spa mass (g) unit 0.13 * for reference mm
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